Abstract
Sinterable silicon carbide powders were prepared by attrition milling and chemical processing of an acheson type α-SiC. Pressureless sintering of these powders was achieved by addition of aluminium nitride together with carbon. Nearly 99% sintered density was obtained. The mechanism of sintering was studied by scanning electron microscopy and transmission electron microscopy. This study shows that the mechanism is a solid state sintering process.
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Datta, M. S., Bandyopadhyay, A. K., & Chaudhuri, B. (2002). Sintering of nano crystalline α silicon carbide doping with aluminium nitride. Bulletin of Materials Science, 25(2), 121–125. https://doi.org/10.1007/BF02706231
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