Single-Source Bismuth (Transition Metal) Polyoxovanadate Precursors for the Scalable Synthesis of Doped BiVO4 Photoanodes

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Abstract

Single-source precursors are used to produce nanostructured BiVO4 photoanodes for water oxidation in a straightforward and scalable drop-casting synthetic process. Polyoxometallate precursors, which contain both Bi and V, are produced in a one-step reaction from commercially available starting materials. Simple annealing of the molecular precursor produces nanocrystalline BiVO4 films. The precursor can be designed to incorporate a third metal (Co, Ni, Cu, or Zn), enabling the direct formation of doped BiVO4 films. In particular, the Co- and Zn-doped photoanodes show promise for photoelectrochemical water oxidation, with photocurrent densities >1 mA cm−2 at 1.23 V vs reversible hydrogen electrode (RHE). Using this simple synthetic process, a 300 cm2 Co-BiVO4 photoanode is produced, which generates a photocurrent of up to 67 mA at 1.23 V vs RHE and demonstrates the scalability of this approach.

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Lu, H., Andrei, V., Jenkinson, K. J., Regoutz, A., Li, N., Creissen, C. E., … Pike, S. D. (2018). Single-Source Bismuth (Transition Metal) Polyoxovanadate Precursors for the Scalable Synthesis of Doped BiVO4 Photoanodes. Advanced Materials, 30(46). https://doi.org/10.1002/adma.201804033

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