InAs/AlAsSb based quantum cascade detector

Abstract

In this letter, we introduce the InAs/AlAsSb material system for quantum cascade detectors (QCDs). InAs/AlAsSb can be grown lattice matched to InAs and exhibits a conduction band offset of approximately 2.1 eV, enabling the design of very short wavelength quantum cascade detectors. Another benefit using this material system is the low effective mass of the well material that improves the total absorption of the detector and decreases the intersubband scattering rates, which increases the device resistance and thus enhances the noise behavior. We have designed, grown, and measured a QCD that detects at a wavelength of λ = 4.84 μm and shows a peak specific detectivity of approximately 2.7 × 107Jones at T = 300 K.