Defect recovery in AlN and InN after heavy ion implantation

Abstract

The annealing of implantation induced lattice damage in AlN and InN was studied by means of the perturbed angular correlation (PAC) technique using the PAC probes 181Hf(181Ta) and 111In( 111Cd). In AlN substantial fractions of the probe atoms occupied substitutional, undisturbed lattice sites after annealing. A detailed investigation of the changes observed during an isochronous annealing programme indicates differences in the recovery process. After In implantation AlN shows considerable annealing of lattice damage already at unexpectedly low temperatures below 600 °C. For Hf implantation AlN experiences a "reverse annealing" effect. For the measurements in InN the PAC results show evidence of In clusters, which are easily formed during the growth of InN or InGaN. © 2002 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.