Melting point of wurtzite-type GaN crystal

Abstract

A two-phase molecular dynamic simulation of coexisting solid and liquid has been made for a wurtzite-type GaN crystal. The melting point is determined by examining the movement of the interface between solid and liquid during the calculation. The pressure dependence of the melting point is systematically obtained for the first time. The melting point Tm increases linearly with pressure P as Tm(K) = 2513 + 186 × P(GPa). © 2003 WILEY-VCH Verlag GmbH & Co. KGaA.