A comprehensive study of Ge1-xSix on Ge for the Ge nMOSFETs with tensile stress, shallow junctions and reduced leakage

Abstract

For the first time, growth of high-quality Ge-rich Ge1-xSi x (0≤x≤0.14) layers on Ge substrate was demonstrated. An effective suppression of the phosphorus diffusion in Ge1-xSi x and a better thermal stability of the nickel germanide on Ge 1-xSix were observed. A higher rectifying ratio with a reduced diode leakage current in n+-Ge1-xSi x/p-Ge1-xSix is compared with n+-Ge/p-Ge. These results indicate that it is suitable for Ge1-xSix to be used as source/drain (S/D) to fabricate the uniaxial tensile-strained channel Ge nMOSFETs. © 2009 IEEE.