Incorporation of Boron Atoms on Graphene Grown by Chemical Vapor Deposition Using Triisopropyl Borate as a Single Precursor

Abstract

We synthesized single-layer graphene from a liquid precursor (triisopropyl borate) using a chemical vapor deposition. Optical microscopy, scanning electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy measurements were used for the characterization of the samples. We investigated the effects of the processing temperature and time, as well as the vapor pressure of the precursor. The B1s core-level XPS spectra revealed the presence of boron atoms incorporated into substitutional sites. This result, corroborated by the observed upshift of both G and 2D bands in the Raman spectra, suggests the p-doping of single-layer graphene for the samples prepared at 1000°C and pressures in the range of 75 to 25 mTorr of the precursor vapor. Our results show that, in optimum conditions for single-layer graphene growth, that is, 1000°C and 75 mTorr for 5 minutes, we obtained samples presenting the coexistence of pristine graphene with regions of boron-doped graphene.