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Growth and characterization of InP-based 1750 nm emitting membrane external-cavity surface-emitting laser

Applied Physics B: Lasers and Optics (2020) 126(12)
DOI: 10.1007/s00340-020-07544-y
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Abstract

The epitaxial growth and emission properties of a membrane external-cavity surface-emitting laser (MECSEL) are demonstrated in the 1750 nm band. A heterostructure consisting of InGaAs quantum wells enclosed by InGaAlAs barriers was deposited on InP by molecular beam epitaxy. The emitted power exceeded 1.5 W, which is the highest that has been reported in this spectral range to date.

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APA

Broda, A., Jeżewski, B., Sankowska, I., Szymański, M., Hoser, P., & Muszalski, J. (2020). Growth and characterization of InP-based 1750 nm emitting membrane external-cavity surface-emitting laser. Applied Physics B: Lasers and Optics, 126(12). https://doi.org/10.1007/s00340-020-07544-y

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