Low-temperature growth of GaAs with high quality by metalorganic vapor phase epitaxy

Abstract

Growth of GaAs by MOVPE (Metal-Organic Vapor-Phase Epitaxy) at a much lower temperature than conventional conditions of 650°C required to produce highly resistive buffer layers and molecular-layer-level abrupt heterojunctions and doped-layer interfaces. It has been widely recognized that growth at 550∼600°C causes poor morphological surfaces on the grown layers. This paper describes a fundamental improvement of the low-temperature growth of GaAs, resulting in smooth surfaces with very low impurity concentrations. Excellent GaAs layers can be grown at 500°C by increasing partial pressure of AsH 3 during growth. The method has been applied to high quality epitaxial layers for electronic device production. © 2009 IOP Publishing Ltd.