Surface morphology of siliconwaveguide after reactive ion etching (RIE)

Abstract

The side wall profile roughness of the silicon waveguide prepared by electron beam lithography and reactive ion etching is extracted by using the boundary tracing method. The maximum, minimum, and average roughness values are extracted from the side wall boundary, and the changes of the side wall boundary of waveguide after electron beam exposure and reactive ion etching were compared. The roughness variation of the waveguide side wall is similar with the same length. And roughness from the bottom of the waveguide etched region is measured directly by laser confocal microscope and roughness correlation statistics are also obtained.