Rapid dislocation-related D1-photoluminescence imaging of multicrystalline Si wafers at room temperature

Abstract

Here we report on a novel method, which allows rapid photoluminescence imaging of band-to-band and dislocation-related radiation, D1, on multicrystalline silicon wafers at room temperature. We demonstrate spatially resolved 5.0 × 5.0 cm2 D1-images, with a resolution of ∼120 μm, within a total recording time of 550 ms. The method provides homogeneous illumination over the whole sample area. Comparison with results from a conventional photoluminescence mapping technique demonstrates the potential of this new method for application as an in-line wafer characterization technique. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.