Comparison of structural perfection of InN layers and InN nanorods grown on the c- and r-planes of Al2O3

Abstract

Transmission Electron microscopy was applied to determine similarities and difference in structural perfection between InN epi-layers grown by MBE on c-and r-plane A12O3 and InN nanocrystals grown on similar substrates using non catalytic, template-free hydride metal-organic vapor phase epitaxy. The study showed that nanocrystals had more perfect crystallinity compared to the layers. While the InN layer growth direction followed the crystallographically required epitaxial growth orientation, the nanorod growth was randomly oriented. The opposite growth polarity has been determined for the InN layers grown along c-direction (In-polarity) in comparison to nanocrystals grown along same direction (N-polarity). © 2007 WILEY-VCH Verlag GmbH & Co. KGaA.