Abstract
Monolithic 3D back-end of line (BEOL) FinFET switch arrays are demonstrated in large single crystalline Si islands (2.56 μm2), whose location, size and shape are determined by design. Details of the improved location-controlled-grain (LCG) technique are presented. A voltage regulator implemented with the BEOL switch arrays using external control signals shows better theoretical figure of merit (FOM) of 0.089ns than 2D voltage regulators of 0.43ns.
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CITATION STYLE
Hsieh, P. Y., Chang, Y. J., Chen, P. J., Chen, C. L., Yang, C. C., Huang, P. T., … Hu, C. (2019). Monolithic 3D BEOL FinFET switch arrays using location-controlled-grain technique in voltage regulator with better FOM than 2D regulators. In Technical Digest - International Electron Devices Meeting, IEDM (Vol. 2019-December). Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/IEDM19573.2019.8993441
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