Observation of boron-related photoluminescence in GaAs layers grown by molecular beam epitaxy

Abstract

Boron-doped GaAs films grown by molecular beam epitaxy have been studied by photoluminescence. Two boron-related peaks have been observed in the spectra. The temperature dependence of these peaks is characteristic of acceptor levels, and a quantitative analysis yields activation energies of 71-72 and 188 meV. While the peak with the lower activation energy can be assigned with some confidence to the BAs0/- level, the second peak may be due to a BAs-SiGa complex rather than the BAs-/- level.