Band gap-tunable molybdenum sulfide selenide monolayer alloy

Abstract

The optical energy gap of as-grown MoS2 flakes from chemical vapor deposition can be modulated from 1.86 eV (667 nm) to 1.57 eV (790 nm) by a vapor phase selenization process. This approach, replacing one chalcogen by another in the gas phase, is promising in modulating the optical and electronic properties of other transition metal dichalcogenide monolayers. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.