Insulating ZnO film on silicon for MIS application

Abstract

High resistive zinc oxide thin film (∼ 0·5 μm) was deposited on single crystal p-silicon (100) wafers by an inexpensive spray-CVD method and was characterized both optically and electrically. Al/ZnO/Si (MIS) device structure was subsequently fabricated and both I - V and C - V characteristics were studied. The semiconductor-insulator interface charge density (Dit) was calculated by Terman method and was found to be 3·85 × 1011 cm-2eV-1. © 1992 Indian Academy of Sciences.