Multiple charge-density waves in R5Ir4Si10(R = Ho Er, Tm, and Lu)

Abstract

The charge-density-wave (CDW) transitions in compounds R5Ir4Si10(R = rare−earth element) have been studied by x-ray-diffraction and electrical conductivity experiments for temperatures between 20 and 300 K. At TCDW incommensurate CDW’s[q→ = (± 0.25 ± δ)c* with δ ≈ 0.03] develop in compounds with R=Ho, Er, Tm, and (Lu0.16Er0.84), while commensurate CDW’s [q→ = (n/7)c*] develop in compounds with R = Lu and (Lu0.34Er0.66). TCDW varies between 83 K in R=Lu and 161.4 K in R=Ho. The compounds with an incommensurate CDW exhibit a second transition at Tlock-in