Transient Analysis of Hybrid Cu-CNT On-Chip Interconnects Using MRA Technique

Abstract

This paper presents the transient analysis of the equivalent single conductor (ESC) model of hybrid Cu-CNT on-chip interconnects for nanopackaging using matrix rational approximation (MRA) modeling technique. The analysis of propagation delay and peak crosstalk noise is carried out for single and coupled Cu-CNT interconnect lines at 14 nm and 22 nm technology nodes. It has been observed that the proposed MRA model provides a speed-up factor of 131 compared to the HSPICE. An error of less than 1% confirms the accuracy of the proposed model compared to the SPICE simulations. It is observed that Cu-CNT lines are more immune to the crosstalk due to lesser coupling effects compared to Cu and CNT interconnects. The efficacy, accuracy, and comprehensive analysis using the proposed model ensures immense application possibility of the proposed model in the VLSI design automation tools at the nanopackaging level.