Interlayer ferromagnetic coupling and enhanced magnetism by biaxial strain in mnbi2te4/vbi2te4 heterojunction

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Abstract

The pristine anti-ferromagnetic interlayer coupling of even layers MnBi2Te4 greatly restricts the possibility of realizing quantum anomalous Hall (QAH) effect. In this work, based on first-principles calculations, we find that the interlayer coupling can be transformed into ferromagnetic order from anti-ferromagnetic by substituting cations with V atoms. Furthermore, when applying biaxial strain, a strong band inversion occurs around Fermi level, achieving quantum anomalous Hall effect. A gapless surface states can further confirm it. Meanwhile, the magnetic moment of Mn and V atoms increases with the increase of strain. We attribute this to the electron hopping to magnetic atoms from p orbitals of nonmagnetic Bi and Te atoms. Our work extends the range for designing and applying for spintronic devices with QAH effect.

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Wu, Z., Song, C., & Li, C. (2021). Interlayer ferromagnetic coupling and enhanced magnetism by biaxial strain in mnbi2te4/vbi2te4 heterojunction. In Journal of Physics: Conference Series (Vol. 2011). IOP Publishing Ltd. https://doi.org/10.1088/1742-6596/2011/1/012096

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