Design, development, and performance of a versatile graphene epitaxy system for the growth of epitaxial graphene on SiC

Abstract

A versatile graphene epitaxy (GrapE) furnace has been designed and fabricated for the growth of epitaxial graphene (EG) on silicon carbide (SiC) in diverse growth environments ranging from high vacuum to atmospheric argon pressure. Radio-frequency induction enables heating capabilities up to 2000 °C, with controlled heating ramp rates achievable up to 200 °C/s. The details of critical design aspects and temperature characteristics of the GrapE system are discussed. The GrapE system, being automated, has enabled the growth of high-quality EG monolayers and turbostratic EG on SiC using diverse methodologies, such as confinement-controlled sublimation (CCS), open configuration, polymer-assisted CCS, and rapid thermal annealing. This showcases the versatility of the GrapE system in EG growth. Comprehensive characterizations involving atomic force microscopy, Raman spectroscopy, and low-energy electron diffraction techniques were employed to validate the quality of the produced EG.