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Comment on]] Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers" [Appl. Phys. Lett. 49, 1257 (1986)]

Applied Physics Letters
DOI: 10.1063/1.98514
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Abstract

In this comment we report new experimental results for the capacitance voltage measurement of p-GaAs/n-Si heterojunction diodes and point out the inappropiate assumption used in our previous letter that the boundaries of the depletion layer do not change much despite the presence of the prelayer. (AIP).

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Won, T., Munns, G., Houdré, R., & Morkoç, H. (1987). Comment on]] Interface charge polarity of a polar on nonpolar semiconductor GaAs/Si with Ga and As prelayers" [Appl. Phys. Lett. 49, 1257 (1986)]. Applied Physics Letters. https://doi.org/10.1063/1.98514

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