Rapid thermal annealing of FePt thin films

Abstract

In this study, Fe52Pt48 thin films were DC magnetron sputter-deposited at room temperature onto thermally oxidized silicon wafers. Rapid thermal annealing (RTA) was employed to induce the phase transformation from the chemically disordered A1 phase into the chemically ordered L1 0 phase. The influence of the annealing temperature, annealing time, and the film thickness on the ordering transformation and (001) texture evolution of FePt films was studied. Rapid thermal annealed films processed at temperatures larger than 600 °C exhibit high chemical L10 order with strong (001) texture. The resultant high perpendicular magnetic anisotropy and large coercivities up to 40 kOe are demonstrated. Simultaneously to the ordering transformation, RTA leads to a strong dewetting behavior of the film forming large islands. This Feature Article presents the state-of-the-art concerning the formation of chemically L10 ordered FePt thin films induced by rapid thermal annealing (RTA). The influence of the annealing temperature, annealing time, and film thickness on the ordering transformation and (001) texture evolution of the FePt thin films is studied and the possible mechanisms for the formation are discussed. In this regard, RTA processing is a potentially interesting technology for the preparation of FePt thin films with strong perpendicular magnetic anisotropy, important for future magnetic storage devices. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.