Dual-Gate Anti-Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations

Abstract

A dual-gate anti-ambipolar transistor (AAT) with a two-dimensional ReS2 and WSe2 heterojunction is developed. The characteristic Λ-shaped transfer curves yielded by the bottom-gate voltage are effectively controlled by the top-gate voltage. This feature is applied to logic operations, with the bottom- and top-gate voltages acting as two input signals and the drain current (Id) monitored as an output signal. Importantly, a single dual-gate AAT exhibits all the two-input logic operations (AND, OR, XOR, NAND, NOR, and XNOR) under optimized input voltages. Additionally, drain voltage (Vd)-induced switching between AND and OR logic operations is achieved. These features are advantageous for simplifying circuit design.