Exploiting Si/CoSi2/Si heterostructures grown by mesotaxy

Abstract

Buried single-crystal silicide layers in silicon formed by ion implantation and annealing have many potential applications (some more practical than others!) including metal base transistors (operating at 77 K), buried collector contacts for bipolar transistors and buried groundplanes for ultrahigh-speed electronics. Fabrication of prototype devices is complicated by the presence of defects in the overlayer silicon, but preliminary results are reported. © 1991.