In this work the calibration of the directional Raman strain shift coefficient for tensile strained Ge microstructures is reported. The strain shift coefficient is retrieved from micro-Raman spectroscopy measurements in combination with absolute strain measurements from x-ray diffraction using focused synchrotron radiation. The results are used to fit the phonon deformation potentials. A linear dependence of the phonon deformation potentials p and q is revealed. The method can be extended to provide strain calibration of Raman experiments also in other material system.
CITATION STYLE
Etzelstorfer, T., Wyss, A., Süess, M. J., Schlich, F. F., Geiger, R., Frigerio, J., & Stangl, J. (2017). Determining the directional strain shift coefficients for tensile Ge: A combined x-ray diffraction and Raman spectroscopy study. Measurement Science and Technology, 28(2). https://doi.org/10.1088/1361-6501/aa5372
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