Properties of ZnSe:Te,O crystals grown by bridgman-stockbarger method

Abstract

Zinc selenide crystals were grown in graphite crucibles by the Bridgman-Stockbarger method in a vertical compression furnace under argon pressure of 5x106 Pa. From the absorption spectra, the band gap energies of the ZnSe single crystals were calculated by a linear fitting process. The maximum wavelength of the emission spectrum of the ZnSe:Te,O scintillator was 630 nm, which was well matched with the response wavelength of the Si photodiode. The energy resolution of the ZnSe:Te,O scintillator was 11.9 % when it was exposed to 137Cs γ-ray. Its size was 10x10x1 mm3. The afterglow level of the ZnSe:Te,O scintillator after 5 ms was 0.023%. The relative light output of the ZnSe:Te,O scintillator was 2.167 times higher than CsI:Tl. The luminescence decay time of the ZnSe:Te,O scintillator has two exponential components with 27 and 84 μs time constant.