Abstract
A novel composite barrier layer with back-to-back graded AlGaN in a GaN/AlGaN/GaN epitaxial structure for high performance n- and p-channel devices on the same platform is proposed. By adjusting the relative thicknesses of the two graded layers, we obtain a spread in the width and concentration of carriers in the 3D slabs. The best barrier amongst those studied, enhances the on-current (ION) by 24.4% in low voltage n-channel devices, 32.2% the p-channel devices whereas the figure of merit of the power device is higher by 3 times, in comparison to the conventional platform.
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CITATION STYLE
Zhou, J., Do, H. B., & De Souza, M. M. (2023). A new back-to-back graded AlGaN barrier for complementary integration technique based on GaN/AlGaN/GaN platform. In 7th IEEE Electron Devices Technology and Manufacturing Conference: Strengthen the Global Semiconductor Research Collaboration After the Covid-19 Pandemic, EDTM 2023. Institute of Electrical and Electronics Engineers Inc. https://doi.org/10.1109/EDTM55494.2023.10103055
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