Demonstration of Microwave Resonators and Double Quantum Dots on Optimized Reverse-Graded Ge/SiGe Heterostructures

Abstract

One of the most promising platforms for the realization of spin-based quantum computing are planar germanium quantum wells embedded between silicon-germanium barriers. To achieve comparably thin stacks with little surface roughness, this type of heterostructure can be grown using the so-called reverse linear grading approach, where the growth starts with a virtual germanium substrate followed by a graded silicon-germanium alloy with an increasing silicon content. However, the compatibility of such reverse-graded heterostructures with superconducting microwave resonators has not yet been demonstrated. Here, we report on the successful realization of well-controlled double quantum dots and high-quality coplanar waveguide resonators on the same reverse-graded Ge/SiGe heterostructure.