Probing the dye-semiconductor interface in dye-sensitized NiO solar cells

Abstract

The development of p-type dye-sensitized solar cells (p-DSSCs) offers an opportunity to assemble tandem photoelectrochemical solar cells with higher efficiencies than TiO2-based photoanodes, pioneered by O'Regan and Grätzel [Nature 353, 737-740 (1991)]. This paper describes an investigation into the behavior at the interfaces in p-DSSCs, using a series of BODIPY dyes, BOD1-3. The three dyes have different structural and electronic properties, which lead to different performances in p-DSSCs. We have applied photoelectron spectroscopy and transient absorption spectroscopy to rationalize these differences. The results show that the electronic orbitals of the dyes are appropriately aligned with the valence band of the NiO semiconductor to promote light-induced charge transfer, but charge-recombination is too fast for efficient dye regeneration by the electrolyte. We attribute this fast recombination, which limits the efficiency of the solar cells, to the electronic structure of the dye and the presence of Ni3+ recombination sites at the NiO surface.