Surface Potential Imaging of Germanium/Monolayer MoS2 Heterostructures

Abstract

The remarkable progress of material synthesis and assembly strategies enables the creation of new heterojunction structures that have electronic properties not seen in conventional homojunction materials and devices [1]. In particular, there has been a growing interest in heterojunction interfaces between atomically thin two-dimensional (2D) materials and conventional three-dimensional (3D) semiconductor materials (e.g., Si, Ge, compound semiconductors) that can be fabricated by the well-established microelectronic technologies. Transitional metal dichalcogenides (TMDs) are one of the emerging 2D materials that have tunable energy band-gaps and unique charge transport properties. However, unlike 3D semiconductors, the 2D materials do not have surface dangling bonds, presenting a challenge in synthesizing controllable 3D/2D heterojunction structures.