Abstract
GaN-based light emitting diodes (LEDs) have been shown to effectively operate down to nanoscale dimensions, which allows further downscaling the chip-based LED display technology from micro-to nanoscale. This brings up the question of what resolution limit of the illumination pattern can be obtained. We show two different approaches to achieve individually switchable nano-LED arrays. We evaluated both designs in terms of near-field spot size and optical crosstalk between neighboring pixels by using finite difference time domain (FDTD) simulations. The numerical results were compared with the performance data from a fabricated nano-LED array. The outcome underlines the influence of geometry of the LED array and materials used in contact lines on the final illumination spot size and shape.
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Kluczyk-Korch, K., Moreno, S., Canals, J., Diéguez, A., Gülink, J., Hartmann, J., … der Maur, M. A. (2021). Individually switchable ingan/gan nano-led arrays as highly resolved illumination engines. Electronics (Switzerland), 10(15). https://doi.org/10.3390/electronics10151829
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