High aspect ratio etched sub-micron structures in silicon obtained by cryogenic plasma deep-etching through perforated polymer thin films

Abstract

Cryogenic plasma deep-etching for silicon sub-micron structures was studied with the use of modified poly(styrene) (PS) perforated masks obtained from laterally phase separated PS and poly (lactic acid) PLA blend thin films. PS mask was stained by heavy metal (ruthenium) or transferred to an intermediate hard mask (silicon oxide). For the stained mask, optimization of standard STiGer cryogenic plasma etching process led to etched Si cavities with minimal defects at rate of 0.8 μm/min but within a limited depth (~1.4 μm). For intermediate hard mask, optimized STiGer etching process was used in order to improve the reproducibility and to obtain the deeply etched features up to 10 μm depth with minimal defects. A higher etch rate of around 1.2 μm/min was achieved.