3D modelling of the novel nanoscale screen-grid FET

Abstract

A novel field effect transistor (FET) that uses 3-dimensional (3-D) embedded gate fingers the Screen-Grid Field Effect Transistor (SGFET) - is proposed. The gating action of the SGFET is based on the design of multiple gating cylinders into the channel region, perpendicular to the current flow. Such configuration allows a full 3-D gate control of the current which improves the device characteristics by increasing the gate to channel coupling. Initial investigations of the SGFET using 3-D TCAD Taurus simulation software are presented in this paper. The results indicate that the proposed SGFET offers the possibility of downscaling without degrading the output characteristics. A comparison between the SGFET and both bulk and SOI MOSFETs shows the superior characteristics of the SGFET for low power operation. © 2006 Materials Research Society.