High-K metal gate contact RRAM (CRRAM) in pure 28nm CMOS logic process

Abstract

A new high density Contact RRAM (CRRAM) cell realized in pure high-k metal gate 28nm CMOS logic process with a very small 35nm×35nm resistive contact hole has been fabricated without extra masking or process step. This study reports the first time of a manufacturable tiny resistive node of RRAM cell on a 28nm CMOS logic platform and fully compatible with high-k metal gate processes. The 28nm Contact RRAM cell exhibits a stable operation window with a very small cell size of 0.03μm2. Due to the scale down and uniform manufacturing process, the cell reliably operates in a low set voltage of 3V and an acceptable reset current of 60μA/cell with short set and reset time of 500ns and 100us. Excellent endurance of more than 1M cycles and stable data retention at high temperature further support the 28nm Contact RRAM will be a promising SOC memory in the future. © 2012 IEEE.