Abstract
The n -type InGaAs Alx Ga1-x As quantum well infrared photodetector (QWIP) with asymmetric graded barriers for broadband detection has been investigated theoretically based on the eight-band kp model. It is found that the intersubband transitions from the ground state to all bound and continuum excited states contribute to the overall absorption and the bound-to-continuum (B-to-C) transitions dominate. The superposition of the bound-to-bound and B-to-C transitions results in a broad detection bandwidth, and both the detected wavelength and bandwidth can be tuned by the applied voltage. The analysis method is also applicable to the GaAs Inx Ga1-x As Iny Ga1-y As QWIP with step quantum wells. The calculated results are consistent with the reported experimental observations. © 2007 American Institute of Physics.
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CITATION STYLE
Liu, W., Zhang, D. H., Huang, Z. M., & Fan, W. J. (2007). Theoretical study of quantum well infrared photodetectors with asymmetric well and barrier structures for broadband photodetection. Journal of Applied Physics, 101(3). https://doi.org/10.1063/1.2434938
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