Conference Proceedings

PERFECT CRYSTAL DEVICE TECHNOLOGY.

DOI: 10.7567/ssdm.1974.b1-2
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Abstract

Conditions for the generation of diffusion-induced dislocations are presented in detail. A new mechanism for dislocation-free high concentration diffusion is described. Next, the influence of diffusion-induced crystal defects on the electrical characteristic is discussed.

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Watanabe, M., Muraoka, H., & Yonezawa, T. (1975). PERFECT CRYSTAL DEVICE TECHNOLOGY. (pp. 269–277). Jpn Soc of Appl Phys (J of Jpn Soc of Appl Phys v 44 suppl 1975). https://doi.org/10.7567/ssdm.1974.b1-2

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