Wide bandgap (WBG) semiconductor power device datasheets and circuit models

Abstract

Accurate product datasheets and circuit models of components are necessary in order to design and manufacture low cost and reliable power electronic modules (PEMs) and power converters. A detailed review of the product datasheets and available circuit models of single-chip wide bandgap (WBG) discrete power devices is presented. The WBG power devices considered include lateral GaN power transistors, vertical GaN and SiC power diodes, and vertical SiC power MOSFETs. It is shown that significant improvements in both the datasheets and circuit models are needed for rapid commercialization of WBG power switching devices. This conclusion is based on in-house measurement of commercial devices as well as detailed review and comparison of WBG product datasheets and circuit models with comparable silicon power devices.