Comparison of the Strength of Binary Dislocation Junctions in fcc Crystals

Abstract

Discrete dislocation dynamics were used to determine the relative strengths of binary dislocation junctions in fcc crystals. Equilibrium junctions of different types Lomer, glissile, coplanar, and collinear were formed by allowing parallel dislocations of unequal length to react. The strengths were determined from the computed minimum strain rate versus the applied shear stress plots. The collinear configuration was found to be the strongest and coplanar the weakest. It was seen that the glissile junction could exist as two variants depending on which parent slip system the shear stress is applied. One variant of the glissile junction was found to be as strong as the collinear configuration.