Sodium-Controlled Interfacial Resistive Switching in Thin Film Niobium Oxide for Neuromorphic Applications

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Abstract

A double layer 2-terminal device is employed to show Na-controlled interfacial resistive switching and neuromorphic behavior. The bilayer is based on interfacing biocompatible NaNbO3 and Nb2O5, which allows the reversible uptake of Na+ in the Nb2O5 layer. We demonstrate voltage-controlled interfacial barrier tuning via Na+ transfer, enabling conductivity modulation and spike-amplitude- and spike-timing-dependent plasticity. The neuromorphic behavior controlled by Na+ ion dynamics in biocompatible materials shows potential for future low-power sensing electronics and smart wearables with local processing.

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APA

Gaggio, B., Jan, A., Muller, M., Salonikidou, B., Bakhit, B., Hellenbrand, M., … MacManus-Driscoll, J. L. (2024). Sodium-Controlled Interfacial Resistive Switching in Thin Film Niobium Oxide for Neuromorphic Applications. Chemistry of Materials, 36(11), 5764–5774. https://doi.org/10.1021/acs.chemmater.4c00965

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