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Electronic transport properties of electron- and hole-doped semiconducting C 1b Heusler compounds: NiTi1-x MxSn (M=Sc, v )

Physical Review B - Condensed Matter and Materials Physics (2010) 82(8)
DOI: 10.1103/PhysRevB.82.085108
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Abstract

The substitutional series of Heusler compounds NiTi1-x Mx Sn (where M=Sc,V and 0

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Ouardi, S., Fecher, G. H., Balke, B., Kozina, X., Stryganyuk, G., Felser, C., … Ikenaga, E. (2010). Electronic transport properties of electron- and hole-doped semiconducting C 1b Heusler compounds: NiTi1-x MxSn (M=Sc, v ). Physical Review B - Condensed Matter and Materials Physics, 82(8). https://doi.org/10.1103/PhysRevB.82.085108

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