Room-temperature tensile creep of a PZT wafer in short and open-circuit conditions

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Abstract

A commercially available soft lead titanate zirconate (PZT) wafer that is poled in thickness direction is subjected to various magnitudes of constant longitudinal tensile stress. The evolutions of electric displacement in thickness direction and longitudinal strain over time are measured. The measured total responses are divided into linear responses, immediate switching-induced responses, and creep responses. It is found that immediate switching-induced responses can be described by stress power functions and creep responses by stress and time power laws, within the current range of tensile stress.

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Lee, C. H., Lee, S. I., & Kim, S. J. (2008). Room-temperature tensile creep of a PZT wafer in short and open-circuit conditions. Journal of the Ceramic Society of Japan, 116(1349), 158–162. https://doi.org/10.2109/jcersj2.116.158

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