High-performance ambipolar diketopyrrolopyrrole-thieno[3,2-b]thiophene copolymer field-effect transistors with balanced hole and electron mobilities

Abstract

Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm 2 V -1 s -1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance OFETs are promising for applications in ambipolar devices and integrated circuits, as well as model systems for fundamental studies. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.