Laser-Ablated Silicon in the Frequency Range from 0.1 to 4.7 THz

Abstract

The optical performance of high-resistivity silicon with a laser-ablated surface was studied in the transmission mode in the frequency range of 0.1-4.7 THz. A reciprocal relationship between the transmission brightness and the surface roughness was observed at discrete THz frequencies. The measured dispersion was reproduced by the THz wave scattering theory using an effective refractive index model. No significant differences between the samples processed either with ps- or ns-duration laser pulses in ambient air or in argon enriched atmosphere were found in the THz regime. It was demonstrated that the majority of optical losses of the silicon with the laser modified surface were due to the scattering of THz waves and not due to the absorption in silicon-compounds formed during the laser ablation.