Perspectives on domain engineering for dielectric energy storage thin films

Abstract

Dielectric energy storage capacitors as emerging and imperative components require both high energy density and efficiency. Ferroelectric-based dielectric thin films with large polarizability, high breakdown strength, and miniaturization potential hold promises for competitive integrated and discrete energy storage devices. Since ferroelectric domains are central to polarization hysteresis loops and, hence, energy storage performances, domain engineering has been widely used in dielectric thin films. In this Perspective, we focus on the most state-of-the-art dielectric energy storage films in the framework of domain engineering. Generally applicable domain engineering strategies are overviewed, followed by articulative examples of their implementation in modulating domain sizes and symmetries that enhance the energy storage. Finally, we envision prospects of further improvements of dielectric thin films within domain engineering and beyond.