Growth Behavior of m-Plane ZnO Epilayer on (100) LiGaO2 by Chemical Vapor Deposition

  • Yu J
  • Huang T
  • Chang L
  • et al.
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Abstract

Nonpolar (1010)-oriented ZnO has been deposited on (100) LiGaO 2 (LGO) substrates with the orientation relationship: (100) LGO (1010) ZnO , and 001 LGO 0001 ZnO by chemical vapor deposition. At 650C or above, the epitaxial deposition of ZnO from the gas phase is in competition with the volatilization of Li from the substrate surface. Zn and O are incorporated into the Li-depleted LGO substrate and ZnGa 2 O 4 spinel nanocrystals are formed on the substrate surface. On the other hand, the (1010)-oriented ZnO grains, which nucleate epitaxially on the LGO substrate, have to grow laterally over the spinel nanocrystals to form a continuous epilayer. The crystallinity of the epilayers is improved both by prolonging the deposition time and by increasing the growth temperature. © 2011 The Electrochemical Society.

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APA

Yu, J.-Y., Huang, T.-H., Chang, L., Liao, Y.-H., Chou, M. M. C., & Gan, D. (2011). Growth Behavior of m-Plane ZnO Epilayer on (100) LiGaO2 by Chemical Vapor Deposition. Journal of The Electrochemical Society, 158(11), H1166. https://doi.org/10.1149/2.060111jes

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