Chemical states and photoluminescence of Si0.3Ge 0.7-nitride film formed by N2+ gas

Abstract

We investigated chemical states and photoluminescence of Si 0.3Ge0.7-nitride film with a surface that was modified by N2 ion implantation and rapid thermal annealing (RTA). By increasing the implantation time, the chemical bonding between Si and Ge was directly broken, and subnitrides were formed. We also observed the N2 vibration mode peak in the x-ray absorption spectra, but after RTA, this peak disappeared completely. SiNx was transformed to the stable Si3N 4. However, GeNx with various chemical states, including Ge3N4 and nanocrystalline Ge, were formed. Photoluminescence observations at room temperature showed strong visible luminescence at wavelengths of 460 and 515 nm. © 2011 American Institute of Physics.