Increased flux pinning force and critical current density in MgB2by nano-La2O3doping

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Abstract

MgB2 superconducting wires and bulks with nano-La2O3 addition have been studied. A series of MgB2 superconducting bulk samples with nano-La2O3 addition levels of 0, 5, 7, 18wt% were prepared. AC resistivity data showed slight increases of Bc2 and unchanged Birr for the bulk samples with doping levels lower than 7 wt% and decreased critical fields for the heavily doped (18 wt%) bulk. X-ray diffraction (XRD) showed the presence of LaB6 in the nano-La2O3 doped MgB2 bulk samples and decreased MgB2 grain size in nano-La2O3 doped bulks. Monocore powder-in-tube (PIT) MgB2 wires without and with 5 wt% nano-La2O3 addition (P-05) were prepared for transport property measurement. 2mol%C-doped Specialty Materials Inc. (SMI) boron powder was used for wire P-05 and previously prepared control wires (control wires were made without the addition of nano-La2O3 powder, W-00 and P2). Low field magnetic properties were obtained from magnetization loop (M-H), transport critical current density (Jc) was measured at 4.2 K for the nano-La2O3 doped PIT wire (P-05) and the control samples (P2 and W-00). The transport critical current density Jc (B) of P-05 at 4.2 K and 8 T (6.0 ×104 A/cm2) was twice that of the control wire. The critical magnetic fields (Bc2 and Birr ) of P-05 and the control sample P2 were compared. The critical fields of P-05 were slightly less than those of P2. Kramer-Dew-Hughes plots indicated a change from surface pinning to a mixture of volume pinning and surface pinning. It is shown that enhancement of P-05's transport properties is due to additional flux pinning by the fine-size rare-earth borides rather than enhanced Bc2 or Birr.

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Zhang, D., Wan, F., Sumption, M. D., Collings, E. W., Thong, C. J., Rindfleisch, M., & Tomsic, M. (2020). Increased flux pinning force and critical current density in MgB2by nano-La2O3doping. In IOP Conference Series: Materials Science and Engineering (Vol. 756). IOP Publishing Ltd. https://doi.org/10.1088/1757-899X/756/1/012019

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