Machine Learning-Based Prediction of Atomic Layer Control for MoS2 via Reactive Ion Etcher

Abstract

This research proposes an innovative method for optimizing plasma etching processes in semiconductor manufacturing using machine learning (ML). Plasma etching is a critical process in defining precise patterns on semiconductor materials, requiring accurate process control. In this study, we employ the ML model based on big data to develop a predictive model that can capture complex relationships between process variables and plasma etching outcomes as the thickness of MoS2. The ML model demonstrated high accuracy, closely aligning with actual experimental results. The experiments confirmed uniform etching across the entire 4-inch wafer, with a precision of approximately 1 nm. Based on this research, we aim to apply ML prediction models to various process conditions of plasma etching and gain deeper insight into the ML’s capabilities for two-dimensional materials in semiconductor manufacturing.