Variability sources and reliability of 3D-FeFETs

Abstract

Discovery of ferroelectricity (FE) in binary oxides enables the advent of FE memories and a plethora of novel CMOS compatible building blocks spanning from the logic domain to high-density storage and neuromorphic computing. In this paper we develop the first comprehensive model of vertical Ferroelectric Field Effect Transistor, V-FeFET, to identify sources of variability, understand retention problems, and point a path to improving reliability and enabling high-density storage FE memories with extended endurance.