Estructura metal-semiconductor-metal en equilibrio

Abstract

This article analyzes the behavior of electric charge carriers (electrons and holes) in a semiconductor material with metal contacts under the thermodynamic equilibrium condition. Expressions were obtained for the concentrations of the electrons and holes, as well as for the Debye Radius (rD) both in the general bipolar case, and in the particular cases of n,p and intrinsic type materials. Based on the previous expressions, the case is analyzed when the quasi-neutrality phenomenon appears in a semiconductor material.